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Advanced Power MOSFET
IRFM120A
FEATURES
IEEE802.3af Compatible
BV DSS = 100 V
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 # A (Max.) @ V DS = 100V
! Lower R DS(ON) : 0.155 ! (Typ.)
R DS(on) = 0.2 !
I D = 2.3 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V DSS
I D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T A =25 % )
Continuous Drain Current (T A =70 % )
Value
100
2.3
1.84
Units
V
A
I DM
V GS
E AS
I AR
E AR
dv/dt
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
&
'
&
&
(
18
" 20
123
2.3
0.24
6.5
A
V
mJ
A
mJ
V/ns
P D
T J , T STG
T L
Total Power Dissipation (T A =25 % ) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
2.4
0.019
- 55 to +150
300
W
W/ %
%
Thermal Resistance
Symbol
R $ JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
52
Units
% /W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
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